Producent | Numer części | Arkusz danych | Szczegółowy opis |
Leshan Radio Company
|
LP2035LT1G |
947Kb/5P |
20V P-Channel MOSFET VDS =-20V |
LP137N3T5G |
563Kb/6P |
20V P-Channel Enhancement MOSFET VDS = -20V |
LP4217T1G |
256Kb/3P |
20V P-Channel (D-S) MOSFET VDS = -20V |
LP4129T1G |
308Kb/3P |
20V P-Channel (D-S) MOSFET VDS = -20V |
LP3443LT1G |
338Kb/6P |
20V P-Channel Enhancement-Mode MOSFET VDS = -20V |
S-LNP2601T1G |
2Mb/8P |
20 V Complementary Trench MOSFET; N-Channel:VDS = 20V; P-Channel:VDS = -20V; |
LMP21D5N3T5G |
303Kb/5P |
20V P-Channel MOSFET |
LP1488WT1G |
439Kb/3P |
-20V P-Channel Power Mosfet |
LP1480WT1G |
489Kb/5P |
-20V P-Channel Power Mosfet |
LPB2325LT1G |
1Mb/5P |
20V P-Channel Enhancement MOSFET |
LP1485WT1G |
578Kb/5P |
-20V P-Channel Power Mosfet |
LMP21D5DW1T1G |
274Kb/5P |
20V Dual P-Channel MOSFET |
LN2302ALT1G |
315Kb/5P |
20V N-Channel Enhancement-Mode MOSFET |
LP3415ELT1G |
297Kb/3P |
20V P-Channel Enhancement-Mode MOSFET |
LP2301LT1G |
809Kb/5P |
20V P-Channel Enhancement-Mode MOSFET |
LP2301ALT1G |
558Kb/5P |
20V P-Channel Enhancement-Mode MOSFET |
LP3415ELT1G |
318Kb/3P |
20V P-Channel Enhancement-Mode MOSFET |
LN2302BLT1G |
320Kb/5P |
20V N-Channel Enhancement-Mode MOSFET |
LDN8002DT1AG |
850Kb/5P |
20V N-Channel Enhancement-Mode MOSFET |
LN108N3T5G |
678Kb/5P |
20V N-Channel Enhancement-Mode MOSFET |