Producent | Numer części | Arkusz danych | Szczegółowy opis |
Vishay Siliconix
|
VS-ST380C |
221Kb/8P |
Center amplifying gate Revision: 20-Dec-13 |
VS-ST280S |
195Kb/8P |
Center amplifying gate Revision: 11-Mar-14 |
UGDT |
92Kb/3P |
Micro Gate Drive Transformers |
VS-GB90SA120U |
288Kb/8P |
Insulated Gate Bipolar Transistor Revision: 31-May-16 |
MGDT |
102Kb/3P |
Miniaturized Gate Drive Planar Transformers |
SIP32205 |
83Kb/3P |
Precision Threshold Logic Gate Switch |
SIHH26N60E |
195Kb/9P |
Kelvin connection for reduced gate noise Rev. B, 24-Aug-15 |
GT100DA60U |
175Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Revision: 22-Jul-10 |
VS-GB75DA120UP |
164Kb/9P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A Revision: 30-Jul-13 |
VS-GT180DA120U |
187Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 180 A 01-Jan-2022 |
VS-GT80DA120U |
186Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 80 A 01-Jan-2022 |
VS-GT140DA60U |
189Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 140 A 01-Jan-2023 |
VS-GT80DA120U |
185Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 80 A 01-Jan-2023 |
VS-GT140DA60U |
295Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 140 A Revision: 31-May-16 |
VS-GT140DA60U |
190Kb/10P |
Insulated Gate Bipolar Transistor (Trench IGBT), 140 A 01-Jan-2022 |
VS-GT90SA120U |
203Kb/9P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A 01-Jan-2022 |
VS-GT100DA120UF |
191Kb/11P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A 01-Jan-2023 |
VS-GT200SA60UP |
176Kb/8P |
Insulated Gate Bipolar Transistor (Trench IGBT), 200 A 01-Jan-2023 |
VS-GT90DA120U |
216Kb/10P |
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A 01-Jan-2023 |
SIS488DN |
558Kb/13P |
Capable of Operating with 5 V Gate Drive Rev. A, 29-Jul-13 |