Producent | Numer części | Arkusz danych | Szczegółowy opis |
NXP Semiconductors
|
BSH207 |
155Kb/7P |
P-channel enhancement mode MOS transistor August 1998 Rev 1.000 |
PHN110 |
79Kb/12P |
N-channel enhancement mode MOS transistor 1997 Jun 17 |
PSMN008-75P |
132Kb/14P |
N-channel enhancement mode field-effect transistor Rev. 01-18 September 2000 |
PSMN003-30P |
291Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 01-23 October 2001 |
PHP98N03LT |
287Kb/14P |
N-channel enhancement mode field-effect transistor Rev. 02-18 October 2001 |
PHN203 |
98Kb/7P |
Dual N-channel enhancement mode TrenchMOS transistor January 1999 Rev 1.000 |
PHP206 |
54Kb/8P |
Dual P-channel enhancement mode MOS transistor 1998 Feb 05 |
PHP222 |
54Kb/8P |
Dual P-channel enhancement mode MOS transistor 1998 Apr 01 |
SI9925DY |
272Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 01-20 July 2001 |
BSN20 |
296Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 03-26 June 2000 |
TJA1042T |
149Kb/22P |
High-speed CAN transceiver with Standby mode Rev. 7-8 May 2012 |
BSH121 |
297Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 01-14 August 2000 |
PH8230 |
214Kb/12P |
N-channel enhancement mode field-effect transistor Rev. 01-23 June 2003 |
BSH111 |
115Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 02-26 April 2002 |
PHD83N03LT |
282Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001 |
PHP112N06T |
262Kb/14P |
N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001 |
PHP47NQ10T |
267Kb/14P |
N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001 |
PHP78NQ03LT |
292Kb/14P |
N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001 |
SI4410DY |
266Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001 |
SI4416DY |
253Kb/13P |
N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001 |